| GaAs表面硫化学钝化,CH3CSNH2处理新探 |
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| 引用本文： | 陆尔东,张发培,余小江,徐世红,徐法强,潘海斌,韩正甫,徐彭寿,张新夷.GaAs表面硫化学钝化,CH3CSNH2处理新探[J].物理学报,1997,46(5):1022-1027. |
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| 作者姓名： | 陆尔东 张发培 余小江 徐世红 徐法强 潘海斌 韩正甫 徐彭寿 张新夷 |
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| 作者单位： | 中国科学技术大学国家同步辐射实验室 |
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| 摘 要： | 应用同步辐射光电子谱（SRPES）和光致荧光（PL）方法探讨不同钝化条件对GaAs表面键合状态和电子态的影响．发现无论在酸性溶液或碱性溶液条件下，经过CH3CSNH2处理的GaAs表面S都与Ga和As成键，形成硫化物钝化层；钝化层形成后，PL谱的强度明显增强，表明GaAs表面复合中心的减少和缺陷态密度的降低
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| 关 键 词： | 砷化镓 硫 表面钝化 CH3CSNH2 |
| 收稿时间： | 1996-05-20 |
SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT |
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| LU ER-DONG,ZHANG FA-PEI,YU XIAO-JIANG,XU SHI-HONG,XU FA-QIANG,PAN HAI-BIN,HAN ZHENG-FU,XU PENG-SHOU and ZHANG XIN-YI.SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT[J].Acta Physica Sinica,1997,46(5):1022-1027. |
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| Authors: | LU ER-DONG ZHANG FA-PEI YU XIAO-JIANG XU SHI-HONG XU FA-QIANG PAN HAI-BIN HAN ZHENG-FU XU PENG-SHOU and ZHANG XIN-YI |
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| Abstract: | In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films. |
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