| 基于Monte Carlo模拟的三种不同结构单电子动态存储器特性比较 |
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| 引用本文： | 许海霞,李钱光,闵永泉,李志扬.基于Monte Carlo模拟的三种不同结构单电子动态存储器特性比较[J].物理学报,2004,53(5):1483-1489. |
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| 作者姓名： | 许海霞 李钱光 闵永泉 李志扬 |
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| 作者单位： | 华中师范大学纳米科技研究院,武汉,430079 |
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| 基金项目： | 教育部高等学校骨干教师资助计划(批准号:GG-140-10511-1009)和湖北省自然科学基金资助的课题. |
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| 摘 要： | 关键词：
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| 关 键 词： | Monte Carlo模拟 单电子存储器 存储时间 |
| 文章编号： | 1000-3290/2004/53(05)/1483-07 |
Comparison of behaviors of three single-electron dynamic memories with different structures based on Monte Carlo simulation |
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| Xu Hai-Xia Li Qian-Guang Min Yong-Quang Li Zhi-Yang.Comparison of behaviors of three single-electron dynamic memories with different structures based on Monte Carlo simulation[J].Acta Physica Sinica,2004,53(5):1483-1489. |
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| Authors: | Xu Hai-Xia Li Qian-Guang Min Yong-Quang Li Zhi-Yang |
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| Abstract: | We have simulated the behaviors of multiple-tunnel-junction, symmetry-trap and ring-type single-electron dynamic memories separately by means of Monte Carlo method. The storage-times of the devices under the influence of such parameters as capacitance and temperature have been analyzed. This revealed that the storage-times of a ring and a symmetric trap-type memory are longer than that of a multiple-tunnel-junction-type memory. |
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| Keywords: | Monte Carlo simulation single-electron memory device storage time |
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