由单负材料组成的一维对称型光子晶体中的隧穿模

由电单负材料A和磁单负材料B构成了一维对称型光子晶体,数值计算表明其带隙中出现了一隧穿模. 材料层数增加,隧穿模宽度急剧变窄,而其位置不变.隧穿模的位置和宽度对入射角的变化都不太敏感. 材料的几何厚度减小,隧穿模的位置蓝移,而其宽度不变. μ_A, ε_B增加,隧穿模的位置红移,宽度减小. 利用隧穿模的以上特性可以实现对电磁波传播的动态调控.

Tunneling mode in symmetrical one-dimensional photonic crystal of single-negative material

Electrical single-negative material A and magnetic single-negative material B are used to constitute a symmetrical one-dimensional photonic crystal. Numerical calculation results indicate that a tunneling mode will appear in its band gap. With material layers increasing, the width of the tunneling mode narrows sharply, but its position remains unchanged. The position and width of the tunneling model are not sensitive to the incident angle. With the geometry thickness of the material reducing, the position of the tunneling mode is blue-shifted, but its width remains unchanged. With μ_A and ε_B increasing, the location of tunneling mode is red-shifted and the width decreases. Using the properties of the tunneling mode, it is possible to realise dynamic regulation for electromagnetic wave propagation.