LPCVD a—Si薄膜的缺陷补偿和掺杂

本文通过ESR,σ_D,σ_Ph,SIMS和E_α等测量,对LPCVD方法生长的a-Si材料的掺杂、缺陷补偿和氢化作了研究,发现在这种材料中,虽然不存在可检测得出的氢含量,却仍然能够进行掺杂,特别是在重掺杂区,缺陷得到有效的补偿,E_F向带边移动。文中基于Street最近提出的关于a-Si掺杂的新观点,用缺陷补偿和化学配位等观点解释了没有氢情况下的掺杂机理。 关键词：

THE COMPENSATION OF DEFECTS AND DOPING IN LPCVD a-Si FILMS

The studies for detects compensation and doping of LPCVD grown a-Si materials have been made by ESR, σ_D, σ_ph, SIMS and E_α measurements. It is found that these materials can still be doped, although with no detectable hydrogen content. In particalar, the films can be doped effectually, and the Fermi level can be moved obviously toward the band edge in the heavily doped zone. In this paper, based on the new point of view about a-Si doping presented by Street recently, the mechanism for a-Si doping without hydrogen is explained in terms of defect compensation and chemical coordination.