利用原子芯片上Z形磁阱囚禁中性87Rb原子

利用解析和数值方法计算了Z形磁阱的囚禁势，发现当囚禁中心和芯片表面距离较远时(该距离和Z形线中部导线的一半长度相差不超过一个量级)，势阱的深度不能近似表示成偏置磁场B_y对应的能量，而要减去囚禁中心的势能高度；而增加B_y进行磁阱压缩到一定值时，势阱深度反而会下降.此外介绍了原子芯片的制作方法，以及利用原子芯片上Z形磁阱囚禁中性⁸⁷Rb原子的实验装置和实验过程.最终有2×10⁶个⁸⁷Rb原子被转移到Z形磁阱中.

A Z-trap in an atom chip for trapping neutral 87Rb atoms

Trapping potential of a Z-trap is calculated with analytic and numeric methods. It's found that when a trapping center is a little bit far from the chip surface (the distance is about one order of the half length of the Z-wire central part), the trapping depth is not approximately eqsual to the potential B_y created by a bias magnetic field, the potential energy at the trapping center should be subtracted from the potential B_y created by the bias field. On the other hand, if an atom cloud is compressed to a certain extent by increasing B_y, the trapping depth will be decreased rather than increased. The preparation of the Z-trap in an atom chip, the experimental setup, and the experimental procedure for trapping neutral ⁸⁷Rb atoms is also introduced. At last we obtained 2×10^{6 87Rb atoms trapped in the Z-trap.}