| 化学源金属诱导多晶硅研究 |
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| 引用本文： | 赵淑云,吴春亚,李娟,刘建平,张晓丹,张丽珠,孟志国,熊绍珍.化学源金属诱导多晶硅研究[J].物理学报,2006,55(2):825-829. |
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| 作者姓名： | 赵淑云 吴春亚 李娟 刘建平 张晓丹 张丽珠 孟志国 熊绍珍 |
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| 作者单位： | 南开大学光电子器件与技术研究所，天津 300071；天津市光电子薄膜器件与技术重点实验室，天津 300071；教育部光电信息技术科学重点实验室，天津 300071 |
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| 基金项目： | 国家科技攻关项目;国家自然科学基金;教育部留学基金;香港RGC项目香港RGC资助项目 |
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| 摘 要： | 以硝酸镍溶液为化学源，对于用不同方法沉积得到的非晶硅膜作晶化前驱物，都能予以不同程度的晶化.用VHF-PECVD方法获得的非晶硅膜作前驱物，易于去氢并更容易晶化.当化学源浓度不同时，晶化效果会存在一定差别，在一定的范围内，溶液浓度越高，晶化后形成的晶粒越大.退火气氛对晶化结果产生某些影响，可以发现，在N2气氛下退火，比在大气下有更好的晶化效果.最后对物理源与化学源作诱导金属的晶化结果进行了比较，结果表明，对诱导金属源而言，化学源显示出更为有效的晶化趋势.
关键词：
金属诱导晶化
多晶硅薄膜
低温制备
退火处理
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| 关 键 词： | 金属诱导晶化 多晶硅薄膜 低温制备 退火处理 |
| 文章编号： | 1000-3290/2006/55(02)/0825-05 |
| 收稿时间： | 1/6/2005 12:00:00 AM |
| 修稿时间： | 2005-01-062005-06-23 |
The research on metal induced crystallization with chemical source |
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| Zhao Shu-Yun,Wu Chun-Ya,Li Juan,Liu Jian-Ping,Zhang Xiao-Dan,Zhang Li-Zhu,Meng Zhi-Guo,Xiong Shao-Zhen.The research on metal induced crystallization with chemical source[J].Acta Physica Sinica,2006,55(2):825-829. |
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| Authors: | Zhao Shu-Yun Wu Chun-Ya Li Juan Liu Jian-Ping Zhang Xiao-Dan Zhang Li-Zhu Meng Zhi-Guo Xiong Shao-Zhen |
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| Institution: | 1.Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;2. The Tianfin key laboratory for Photo-Electronic Thin Film Devices and Technology, Tianfin 300071, China ;3.ey Laboratory of Opto- electronic Information Science and Technology, Ministry of Education, Tanjin 300071, China ;4. Tianfin Engineering Teachers College, Tianjin 300222, China |
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| Abstract: | The metal induced crystallization with chemical source on different silicon based films is studied. All amorphous silicon films deposited by LPCVD, RF-PECVD and VHF-PECVD have been crystallized. However, the a-Si films prepared by VHF-PECVD seems to have crystallized better. The crystallization was also affected by the concentration of the chemical solution. Under a certain conditions, the polycrystalline silicon crystallized with the solution of 10000ppm has larger grain size than that with 5000ppm solution. The annealing atmosphere also affects the crystallization process. Compared with the physical inducing source, the chemical inducing source gives different micro-crystallization structures. For the metal induced crystallization, the chemical source tends to be more advantageous. |
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| Keywords: | metal induced crystallization ploy-crystalline Si films preparation at low temperature annealing treatment |
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