| Ge(001)衬底上分子束外延生长高质量的Ge1-xSnx合金 |
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| 引用本文： | 苏少坚,张东亮,张广泽,薛春来,成步文,王启明.Ge(001)衬底上分子束外延生长高质量的Ge1-xSnx合金[J].物理学报,2013,62(5):58101-058101. |
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| 作者姓名： | 苏少坚 张东亮 张广泽 薛春来 成步文 王启明 |
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| 作者单位： | 1. 华侨大学信息科学与工程学院, 厦门 361021;
2. 中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京 100083 |
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| 基金项目： | 国家自然科学基金 (批准号: 61036003, 61176013, 60906035, 61177038)和华侨大学科研基金 (批准号: 12BS221)资助的课题. |
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| 摘 要： | Ge1-xSnx是一种新型IV族合金材料, 在光子学和微电子学器件研制中具有重要应用前景. 本文使用低温分子束外延(MBE)法, 在Ge(001)衬底上生长高质量的Ge1-xSnx合金, 组分x分别为1.5%, 2.4%, 2.8%, 5.3%和14%, 采用高分辨X射线衍射(HR-XRD)、卢瑟福背散射谱(RBS) 和透射电子显微镜(TEM)等方法表征Ge1-xSnx合金的材料质量. 对于低Sn组分(x≤ 5.3%)的样品, Ge1-xSnx合金的晶体质量非常好, RBS的沟道/随机产额比(χmin)只有5.0%, HR-XRD曲线中Ge1-xSnx衍射峰的半高全宽(FWHM)仅100' 左右. 对于x=14%的样品, Ge1-xSnx合金的晶体质量相对差一些, FWHM=264.6'.
关键词：
锗锡合金
锗
分子束外延
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| 关 键 词： | 锗锡合金 锗 分子束外延 |
| 收稿时间： | 2012-09-04 |
High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy |
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| Su Shao-Jian,Zhang Dong-Liang,Zhang Guang-Ze,Xue Chun-Lai,Cheng Bu-Wen,Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy[J].Acta Physica Sinica,2013,62(5):58101-058101. |
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| Authors: | Su Shao-Jian Zhang Dong-Liang Zhang Guang-Ze Xue Chun-Lai Cheng Bu-Wen Wang Qi-Ming |
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| Institution: | 1. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China;2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x=1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x≤ 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield (χmin) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx peak in HR-XRD curve is 100". For the sample with x=14%, the crystalline quality of the alloy is degraded and FWHM is 264.6". |
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| Keywords: | germanium-tin (Ge1-xSnx) alloy germanium (Ge) molecular beam epitaxy (MBE) |
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