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面内场对三类硬磁畴的影响
引用本文:胡云志,孙会元.面内场对三类硬磁畴的影响[J].物理学报,2009,58(2):1242-1245.
作者姓名:胡云志  孙会元
作者单位:(1)河北师范大学物理科学与信息工程学院,河北省新型薄膜材料实验室,石家庄 050016; (2)河北师范大学物理科学与信息工程学院,河北省新型薄膜材料实验室,石家庄 050016;科学出版社高等教育出版中心,北京 100717
基金项目:国家自然科学基金(批准号:10274018)和河北师范大学博士基金(批准号:L2006B10)资助的课题.
摘    要:采用直流偏场整形的方法,研究了面内场对石榴石磁泡薄膜中三类硬磁畴的影响.得到面内场作用下三类硬磁畴畴壁中垂直布洛赫线(VBL)是逐步解体的,而且三类硬磁畴具有相同的临界面内场范围[H1ip,H2ip],其中H1ip是硬磁畴中VBL开始丢失时的临界面内场,H2ip是VBL完全丢失 关键词: 硬磁畴 整形 垂直布洛赫线

关 键 词:硬磁畴  整形  垂直布洛赫线
收稿时间:2008-05-16

Influence of in-plane fields on the three kinds of hard domains
Hu Yun-Zhi,Sun Hui-Yuan.Influence of in-plane fields on the three kinds of hard domains[J].Acta Physica Sinica,2009,58(2):1242-1245.
Authors:Hu Yun-Zhi  Sun Hui-Yuan
Abstract:The influence of in-plane field on three kinds of hard domains was studied experimentally by means of direct current bias fields reconstruction. The experiment verifies that VBLs in those three kinds of hard domains collapse gradually under the in-plane field. And the conclusion we obtained that these hard domains have the same range of the critical in-plane field [H1ip,H2ip] corrects the previous view that (H1ip)IID<(H1ip)ID<(H1ip)OHB. By revealing that the breakdown of VBLs affected by in-plane field is independent of the rigidity of the hard domains, this paper provides an important clue for interpreting the mechanism of the VBLs' vanishing and a new scheme for exactly measuring the critical in-plane field under which VBLs begin to disappear.
Keywords:hard domain  reconstruction  vertical Bloch line
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