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磁控溅射法制备的CaCu3Ti4O12薄膜
引用本文:周小莉,杜丕一.磁控溅射法制备的CaCu3Ti4O12薄膜[J].物理学报,2005,54(4):1809-1813.
作者姓名:周小莉  杜丕一
作者单位:(1)台州学院物理系,临海 317000;浙江大学硅材料国家重点实验室,杭州 310027; (2)浙江大学硅材料国家重点实验室,杭州 310027
基金项目:国家自然科学基金(批准号:19972010)资助的课题.
摘    要:采用溅射方法成功地制备了CaCu33Ti44O1212薄膜, 用原子力显微镜、x射线衍射(XRD)仪和LCR分析仪对样品进行形貌、物相结构和介电性质的研究.XRD表明,薄膜比块体的晶 格常数小但晶格畸变较大;LCR测量结果显示,在相同温度下薄膜比块体的相对介电常数低 ,薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大.分析表明:薄膜的相对 介电常数较低是样品中晶相含量较低、缺陷较多使内部阻挡层电容大量减小、致密度不高引 起的;薄膜中 关键词: 磁控溅射 3Ti44O1212')" href="#">CaCu33Ti44O1212 介电常 数 激活能

关 键 词:磁控溅射  CaCu33Ti44O1212  介电常    激活能
文章编号:1000-3290/2005/54(04)/1809-05
收稿时间:2004-05-31

CaCu33Ti44O1212 films prepared by magnetron s puttering
Zhou Xiao-Li and Du Pi-Yi.CaCu33Ti44O1212 films prepared by magnetron s puttering[J].Acta Physica Sinica,2005,54(4):1809-1813.
Authors:Zhou Xiao-Li and Du Pi-Yi
Abstract:Thin CaCu33Ti44O1212 ceramic films have been successfully fabricated by a magnetron sputtering method and the surface morphology, microstructure and dielectric property of the samples have been measured by using atom force microscope, x-ray diffractometer (XRD) and LCR meter. XRD patterns show that the lattice constant of the films is less than that of the bulk materials, while the distort ion of the lattice in the films is comparatively larger. LCR results show that t he relative dielectric constant of the films is lower than that of the bulck mat erials at fixed temperature, and the temperature at which the dielectric constan t transits abruptly is higher and the activation energy of the films is larger. Further analysis shows that the lower crystallinity and more defects in the samp les result in the rapid decrease of the barrier layer capacity and film density, which should be responsible for the lower relative dielectric constant. The inc rease of the activation energy in the samples depends mainly on the factors such as internal stress, microstructure, defect and domain etc. The rapid increase o f the dielectric constant in lower frequency range implies that there exists int erface polarized phenomenon in the samples, which is related to the defects and dangling bonds on the interface.
Keywords:magnetron sputtering  CaCu33Ti44O1212  dielectric constant  activation energy
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