首页 | 本学科首页   官方微博 | 高级检索  
     检索      

镍基单晶高温合金界面位错网在剪切载荷作用下的演化
引用本文:吴文平,郭雅芳,汪越胜,徐爽.镍基单晶高温合金界面位错网在剪切载荷作用下的演化[J].物理学报,2011,60(5):56802-056802.
作者姓名:吴文平  郭雅芳  汪越胜  徐爽
作者单位:北京交通大学工程力学系,北京 100044
基金项目:国家自然科学基金(批准号:10672016),中央高校基本科研业务费专项资金 (批准号:2009JBZ015)和北京交通大学优秀博士生科技创新基金(141039522)资助的课题.
摘    要:运用分子动力学方法,研究了镍基单晶高温合金γ/γ' 相界面错配位错网在剪切载荷作用下的演化特征.结果表明:(100),(110) 和 (111) 三种相界面形成的位错网在载荷作用下有不同形式和不同程度的损伤,其变形和损伤随温度的增加而增加.在相同的剪切载荷和温度作用下,(100) 相界面形成的正方形位错网最稳定. 关键词: 镍基单晶高温合金 界面位错网 分子动力学

关 键 词:镍基单晶高温合金  界面位错网  分子动力学
收稿时间:2010-04-28
修稿时间:8/6/2010 12:00:00 AM

Evolution of interphase misfit dislocation networks in Ni-based single crystal superalloy under shear loading
Wu Wen-Ping,Guo Ya-Fang,Wang Yue-Sheng,Xu Shuang.Evolution of interphase misfit dislocation networks in Ni-based single crystal superalloy under shear loading[J].Acta Physica Sinica,2011,60(5):56802-056802.
Authors:Wu Wen-Ping  Guo Ya-Fang  Wang Yue-Sheng  Xu Shuang
Institution:Department of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044, China;Department of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044, China;Department of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044, China;Department of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044, China
Abstract:The molecular dynamics simulation is used to study the evolution of misfit dislocation networks at γ/γ' phase interfaces of Ni-based single crystal superalloy under shear loading. From the simulation we found that the three patterns of dislocation networks on the (100), (110) and (111) phase interfaces show different degrees and patterns of damage. The deformation and damage occur easier at a higher temperature. Under the same shear loading and temperature, the square dislocation network at (100) phase interface is the most stable.
Keywords:Ni-based single crystal superalloy  interphase dislocation network  molecular dynamics
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号