p-HgCdTe反型层中子能带电子的基态能量

用变分自洽方法求解了ｐ－ＨｇＣｄＴｅ金属－绝缘体－半导体（ＭＩＳ）结构Ｎ型反型层子能带的基态能量Ｅ₀及其与表面电子浓度的关系，计算中考虑了窄禁带半导体Hg_1-xCd_xTe带间相互作用所引起的非抛物带结构、波函数平均效应、共振缺陷态、Ｚｅｎｅｒ隧穿、以及电场在屏蔽长度内的衰减等因素，导出了子能带基态能量Ｅ₀的计算公式并获得了与实验符合较好的结果。

GROUND STATE ENERGY OF THE ELECTRON SUBBAND IN p-TYPE HgCdTe INVERSION LAYER

By using a modified self-consistent variation method, we have calculated the subband structures of n-type inversion layer in p-type HgCdTe NIS (metal-insulator-semiconductor) devices, obtained the ground subband energy E₀ and its dependence on both the doping concentration in bulk HgCdTe and the surface electron concent-ration in the inversion layer. In the treament, the influence of non-parabolic band structure due to the interaction between the conduction band and the valence band, the Zener tunneling, the resonant states and the screening effect of the surface electric field have been considered. A simple and useful formula for calculating gro-and state energy E₀ has been presented. The calculated results show good agreement with experimental data.