In2O3 透明薄膜晶体管的制备及其电学性能的研究

采用磁控溅射方法在玻璃衬底上生长了In₂O₃晶体薄膜.该薄膜具有(111)晶面择优取向,晶粒尺寸达到33 nm.利用光刻工艺制作了以In₂O₃晶体薄膜为沟道层的底栅式薄膜晶体管.In₂O₃薄膜晶体管具有良好的栅压调制特性,场效应迁移率达到6.3 cm²/(V·s),开关电流比为3×10³,阈值电压为-0.9 V.结果表明,In

Fabrication and performance of indium oxide based transparent thin film transistors*

Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In₂O₃ film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In₂O₃ as active channel layers. The In₂O₃ TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm²/V·s, an on-off current ratio of 3×10³, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In₂O₃ TFTs promising for display panel applications.