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稀土元素掺杂的Hf基栅介质材料研究进展
引用本文:郑晓虎,黄安平,杨智超,肖志松,王玫,程国安.稀土元素掺杂的Hf基栅介质材料研究进展[J].物理学报,2011,60(1):17702-017702.
作者姓名:郑晓虎  黄安平  杨智超  肖志松  王玫  程国安
作者单位:(1)北京航空航天大学物理系,北京 100191; (2)北京师范大学射线束技术与材料改性教育部重点实验室,北京 100875
基金项目:国家自然科学基金(批准号:50802005,11074020),教育部新世纪优秀人才基金(NCET-08-0035)和教育部博士点基金(批准号:200800061055)资助的课题.
摘    要:随着金属氧化物半导体场效应管(MOSFETs)等比缩小到45 nm技术节点,具有高介电常数的栅介质材料(高k材料)取代传统的SiO2已经成为必然,然而Hf基高k材料在实际应用中仍然存在许多不足,而稀土元素掺杂在提高Hf基栅介质材料的k值、降低缺陷密度、调整MOSFETs器件的阈值电压等方面表现出明显的优势.本文综述了Hf基高k材料的发展历程,面临的挑战,稀土掺杂对Hf基高k材料性能的调节以及未来研究的趋势. 关键词: k栅介质')" href="#">Hf基高k栅介质 稀土掺杂 氧空位缺陷 有效功函数

关 键 词:Hf基高k栅介质  稀土掺杂  氧空位缺陷  有效功函数
收稿时间:3/7/2010 12:00:00 AM

Progress in rare earth doped Hf-based high-k gate dielectrics
Zheng Xiao-Hu,Huang An-Ping,Yang Zhi-Chao,Xiao Zhi-Song,Wang Mei,Cheng Guo-An.Progress in rare earth doped Hf-based high-k gate dielectrics[J].Acta Physica Sinica,2011,60(1):17702-017702.
Authors:Zheng Xiao-Hu  Huang An-Ping  Yang Zhi-Chao  Xiao Zhi-Song  Wang Mei  Cheng Guo-An
Institution:Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China
Abstract:As the scaling of MOSFETs continues towards 45 nm technology node, it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics, decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress, the challenge of Hf-based high-k materials, the influence of rare earth doping on Hf-based high-k materials and its future trend.
Keywords:Hf-based high-k gate dielectrics  rare earth doping  oxygen vacancies  effective work function
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