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掺铒nc-Si/SiO2薄膜中nc-Si和Er3+与非辐射复合缺陷间相互作用对薄膜发光特性的影响
引用本文:陈长勇,陈维德,王永谦,宋淑芳,许振嘉.掺铒nc-Si/SiO2薄膜中nc-Si和Er3+与非辐射复合缺陷间相互作用对薄膜发光特性的影响[J].物理学报,2003,52(3):736-739.
作者姓名:陈长勇  陈维德  王永谦  宋淑芳  许振嘉
作者单位:(1)中国科学院半导体研究所,北京 100083;; (2)中国科学院半导体研究所,北京 100083;中国科学院凝聚态物理中心,表面物理国家重点实验室,北京 100080
基金项目:国家自然科学基金(批准号:69976028)资助的课题.
摘    要:对nc-Si/SiO2薄膜中纳米硅(nc-Si)、Er3+和非辐射复合缺陷三者间的关系作了研究.在514.5 nm光激发下,nc-Si/SiO2薄膜在750nm和1.54μm处存在较强的发光,前者与薄膜中的nc-Si有关,后者对应于Er3+从第一激发态4I13/2到基态4I15/2的辐射跃迁.随薄膜中Er3+含量的提高,1.54μm处的发光强度明显增强,750 nm处的发光强度却降低.H处理可以明显增强薄膜的发光强度,但是对不同退火温度样品,处理效果却有所不同.根据以上实验结果,可得如下结 关键词: Er3+ nc-Si H处理

关 键 词:Er3+  nc-Si  H处理
收稿时间:2002-04-26
修稿时间:2002年4月26日

Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films
Chen Chang-Yong,Chen Wei-De,Wang Yong-Qian,Song Shu-Fang and Xu Zhen-Jia.Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films[J].Acta Physica Sinica,2003,52(3):736-739.
Authors:Chen Chang-Yong  Chen Wei-De  Wang Yong-Qian  Song Shu-Fang and Xu Zhen-Jia
Abstract:Correlation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 nm laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 154μm. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and nonradiative centers has a great influence on photoluminescence from nc-Si/SiO2 films.
Keywords:Er    3+      nc  Si    H treatment
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