温度与外磁场对Si均匀掺杂的GaAs量子阱电子态结构的影响

本文在有效质量近似下,通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=273 K,磁感应强度B=25 T,Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构.研究了温度与外磁场对子带能量,本征包络函数,自洽势,电子密度分布,及费米能量的影响.发现在给定磁感应强度B=fi0下,随温度升高子带能量单调增加,费米能量单调递减,自洽势的势阱变深变陡,电子密度分布变宽,峰值降低;在给定温度下,随磁感应强度的增加子带能量及费米能量单调递增,自洽势阱变浅变宽,电子密度分布变窄,峰值升高.

Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well

By solving the Schrödinger equation and the Poisson equation self-consistently, we have calculated the electronic structure for the Si-uniformally-doped GaAs/AlGaAs quantum well system at T=273 K and B=25 T in the effective mass approximation. We also studied the influence of the temperature and the external magnetic field on the subband energies, eigen-envelope functions, self-consistent potential, density distribution of the electrons, and the Fermi energy. It is found that at the given magnetic field B≠0, with the increase of temperature, the subband energies increase monotonically, the Fermi energy decreases monotonically, the width of the self-consistent potential well decreases, the depth of the well increases, the distribution of the electron density becomes wider, and the peak value is reduced. At the given temperature, with the increase of the strength of the magnetic field, the subband energies and Fermi energy increase monotonically, the depth of the self-consistent potential well is reduced, the peak of the electron density distribution becomes higher, and concentrated around the center of the well.
Keywords： doping quantum well magnetic field electronic structure