SiC/SiO_2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型 ,并对 6H SiC反型层迁移率进行了单电子的MonteCarlo模拟 ,模拟中考虑了沟道区的量子化效应 .模拟结果表明 ,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好 .模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著 ,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响 ,温度升高会引起沟道迁移率降低 .

MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS

A new interface roughness scattering model is developed using exponential autocovariance functions.The electron mobility in 6H-SiC inversion layers is studied by single-electron Monte Carlo approach that takes into account the size quantization and the main scattering mechanisms in SiC inversion layers.The simulation results show that the electron mobility calculated using the exponential model presented in this paper are in good agreement with the experimental data. Interface roughness scattering is shown to play a strong role in the high effective transverse field.The electron mobility falls as the temperature increases.The roughness scattering under higher effective fields is reduced significantly by screening effects.