Electron transport in the carbon-copper nanocluster structure

The electron transport in hydrogenated amorphous carbon films a-C: H with copper nanocluster inclusions has been investigated. The conditions of cluster formation are derived. It is theoretically demonstrated that the energy band structure of the matrix substantially affects the conditions of cluster formation. The electron transport depends on the cluster structure. It is found that, below the percolation threshold (the case of isolated clusters), the transport current is governed by two components depending on the electric field strength. At low field strengths, the current is caused by electrons in the conduction band of amorphous carbon, which are thermally excited from copper clusters. At high field strengths, the transport current is provided by tunneling electrons from the Fermi level of copper clusters to the conduction band of a-C: H. The difference between the mobility edge of the conduction band of amorphous carbon and the Fermi level in copper clusters is determined from the temperature dependence of the resistance and proves to be equal to 0.48 eV. The temperature dependences of the resistance at low field strengths exhibit a fine structure. It is revealed that, above the percolation threshold, the electrical resistance of clusters is considerably contributed by the residual resistance, which is supposedly associated with the electron scattering by cluster surfaces. The temperature effect on the electron transport is examined using the spin-wave scattering technique at a frequency of 4.0 GHz. It is found that the spin wave in the yttrium iron garnet (YIG) film is predominantly affected by thermally excited electrons located above the mobility edge in the conduction band of a-C: H.