The growth and domain structure of YBa2Cu3Ox films on neodymium gallate substrates with a deviation of the normal to the surface from the [110] direction in NdGaO3 |
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| Authors: | I K Bdikin P B Mozhaev G A Ovsyannikov F V Komissinskii I M Kotelyanskii E I Raksha |
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| Institution: | (1) Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(2) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia |
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| Abstract: | The growth, crystal structure, and electrophysical properties of YBa2Cu3Ox (YBCO) epitaxial films grown with and without a CeO2 epitaxial sublayer on NdGaO3 (NGO) substrates with the normal to the surface deviating from the 110] axis by 5° to 26.6° around the 001] axis are investigated. It is shown that the orientation of YBCO epitaxial films grown on such substrates is determined by the existence of symmetry-equivalent directions in the substrate and in the CeO2 layer, as well as by the rate of film deposition. For a high deposition rate, YBCO films grow on the CeO2 sublayer in the 001] orientation irrespective of the orientation of the substrate and the sublayer. It was found that when the angle of deviation of the substrate plane is from the (110) NGO plane, twinning of one or both twinning complexes in YBCO may be suppressed. |
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