Critical magnetic field H
c2 and electron scattering in MgB2 |
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Authors: | N P Shabanova S I Krasnosvobodtsev A V Varlashkin V S Nozdrin A I Golovashkin |
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Institution: | (1) Lebedev Physical Institute, Russian Academy of Sciences, Leninskiĭ pr. 53, Moscow, 119991, Russia |
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Abstract: | The correlation between the upper critical field H c2 and the residual resistivity ρ of the MgB2 compound is studied in a wide range of ρ values. The slope ?dH c2/dT of the temperature dependence of H c2 near T c is found to increase steadily with increasing residual resistivity to 100 μΩ cm. Over the range from 0 to 50 μΩ cm, the dependence of ?dH c2/dT on ρ is fitted well by a linear function, which is typical of a single-band superconductor. The fit is performed using the electronic parameters of the two bands (π and σ) that form the Fermi surface. The field H c2 is assumed to depend on the electronic parameters of the σ band only. Using this approximation, the following quantities are estimated: the relative contribution of σ electrons to the total conductivity along the boron planes (which turns out to be about 1/2), the ratio of the mean free paths of electrons in the σ and π bands l σ/l π ≈ 1.5, and the ratios between some other parameters describing electron scattering. |
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