Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu + Sm

This paper presents the results of complex measurements of the microphotoluminescence spectra of quantum-well structures based on InGaN/GaN〈Sm〉 and the determination of the concentration and charge state of the Sm dopant. It has been shown that an increase in the magnetic field strength and the excitation intensity of the microphotoluminescence spectra leads to an increase in the luminescence intensity and a shift in the position of the maximum of the emission wavelength toward the short-wavelength region of the spectrum. Measurements of the microphotoluminescence spectra with variations in the external magnetic field strength, as well as with the introduction of paramagnetic and magnetic impurities, provide additional information on the mechanisms of formation of luminescence spectra in the quantum-well structures InGaN/GaN〈Sm〉,〈Eu + Sm〉. In the long-wavelength region, the influence of the magnetic field on the shape of the microphotoluminescence spectra of the InGaN/GaN structures doped with Sm and Sm + Eu is less pronounced than that in the short-wavelength region.