A new bound-exciton emission band in ZnSe crystals and multiplasmon optical transitions |
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Authors: | V S Vavilov M V Chukichev R R Rezvanov A A Klyukanov K D Sushkevich A Z Avavdekh |
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Institution: | (1) M. V. Lomonosov Moscow State University, 119899 Moscow, Russia;(2) Moldavian State University, 277009 Kishinev, Moldava |
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Abstract: | We have investigated cathodoluminescence both in unannealed ZnSe crystals and in crystals annealed in a Bi melt at a temperature
of 1200K for 120 h with subsequent quenching. In the wavelength range 450–480 nm we have detected a new line series I
i
s
-nLO-mPl consisting of the bound-exciton emission line I
i
s
with wavelength λ=455.9 nm and its plasmon and LO-phonon echoes I
i
s
-LO (λ
1=461.3 nm), I
i
s
-2LO (λ
2=466.8 nm), I
i
s
-3LO (λ
3=472.4 nm), and I
i
s
-4LO (λ
4=478.3 nm). We have determined the mean number of emitted LO phonons N
LO=2.2±0.1 per photon. It is shown that the observed finer structure of the band may be due to multiphonon optical transitions.
At low plasma densities (ω
p
≪ω
LO
) the Coulomb interaction causes broadening of the I
i
s
-nLO series. In samples with denser plasma, in which the condition ω
p
⩽ω
LO
is met, multiplasmon satellites of the series I
i
s
-nLO-mPl are observed. Theoretical calculations of the shape of the emission band agree with experiment.
Fiz. Tverd. Tela (St. Petersburg) 41, 1176–1180 (July 1999) |
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Keywords: | |
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