X-ray measurement of a microdistortion tensor and its application in an analysis of the dislocation structure of thick GaN layers obtained by hydrochloride gaseous-phase epitaxy

The method of two-and three-crystal x-ray diffractometry (TCD) is used for studying the dislocation structure of thick GaN layers grown by chloride gaseous-phase epitaxy (CGE) on sapphire, as well as on a thin GaN layer, which is grown by the metalloorganic synthesis (MOS) method. Five components of the microdistortion tensor 〈?_ij〉 and the sizes of the coherent scattering regions along the sample surface and along the normal to it are obtained from the measurements of diffracted intensity in the Bragg and Laue geometries. These quantities are used to analyze the type and geometry of the dislocation arrangement and to calculate the density of the main types of dislocations. The density of the vertical screw dislocations, as well as of the edge dislocations, decreases (by a factor of 1.5 to 3) during growth on a thin GaN layer. The diffraction parameters of the thick layer on the MOS-GaN substrate suggest that it has a monocrystalline structure with inclusions of microcrystalline regions.