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Erbium photoluminescence excitation spectroscopy in Si: Er epitaxial structures |
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| Authors: | B A Andreev Z F Krasil’nik A N Yablonsky V P Kuznetsov T Gregorkiewicz M A J Klik |
| Institution: | (1) Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Physicotechnical Institute, Lobachevskii Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia;(3) Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstaat 65, NL-1018XE Amsterdam, The Netherlands |
| Abstract: | Excitation spectra of erbium photoluminescence in Si: Er epitaxial structures are studied within a broad pump wavelength range (λex = 780–1500 nm). All the structures studied reveal a fairly strong erbium photoluminescence signal at photon energies substantially smaller than the silicon band-gap width (λ = 1060 nm) with no exciton generation. A possible mechanism of erbium ion excitation in silicon without exciton involvement is discussed. |
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