Energy levels and radiative lifetimes of 3pns 3P0 and 3pnd 3P0 series of Si I

The energy levels and lifetimes of 3pns 3P0 (n=7-35) and 3pnd 3P0(n=6-17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p3 is discussed. The 3pnd 3P0 series, especially 3p4d 3P0,3p5d 3P0 and 3p6d 3P0 are perturbed strongly by the core-excited state 3s3p3 3P0. These cause the lifetime of 3pnd 3P0 (n=5-7) to be less than that of 3p4d 3P0. The lifetimes of 3p14d 3P0 (65479.14 cm-1) and 3p16d 3P0 (65608.77 cm-1) are less than that of their frontal states respectively, because these states are perturbed by 3p22s 3P0 (65476.48 cm-1) and 3p30s 3P0 (65608.99 cm-1) respectively.