| Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE |
| |
| 作者姓名： | 于永芹 张晓阳 黄柏标 尉吉勇 周海龙 潘教青 秦晓燕 任忠祥 |
| |
| 作者单位： | State Key Laboratory of Crystal Materials，Shandong University Jj'nan 250100，State Key Laboratory of Crystal Materials，Shandong University Jj'nan 250100 Shandong Huaguang Optoelectronic Ltd.，Ji'nan 250101，State Key Laboratory of Crystal Materials，Shandong University Jj'nan 250100 Shandong Huaguang Optoelectronic Ltd.，Ji'nan 250101，State Key Laboratory of Crystal Materials，Shandong University，Ji'nan 250100，State Key Laboratory of Crystal Materials，Shandong University，Ji'nan 250100，State Key Laboratory of Crystal Materials，Shandong University，Ji'nan 250100，State Key Laboratory of Crystal Materials，Shandong University，Jj'nan 250100 Shandong Huaguang Optoelectronic Ltd.，Ji'nan 250101，Shandong Huaguang Optoelectronic Ltd.，Ji'nan 250101 |
| |
| 摘 要： | InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained
|
Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE |
| |
| Abstract: | InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAs multiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy (MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had been partly accommodated by the misfit dislocation formation in the strained MQW material. It led to that the full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQW structures, and there was no detectable room temperature photoluminecence (RT-PL) for the strained MQW structures. With the increasing of the P/As ratio, the separation angle between the substrate peak and the zeroth order peak of SCMQW decreased. The FWHMs of both the zeroth order satellite and RT-PL of SCMQW structures also decreased, whereas the intensity of RT-PL increased. This indicated that the quality of epitaxial layers was improved with the increasing of the strain compensation. |
| |
| Keywords: | |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
