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Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In_(0.5)Ga_(0.5)As/GaAs quantum dots grown by molecular beam epitaxy
引用本文:魏全香,任正伟,贺振宏,牛智川.Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In_(0.5)Ga_(0.5)As/GaAs quantum dots grown by molecular beam epitaxy[J].Chinese Optics Letters,2009(1):52-55.
作者姓名:魏全香  任正伟  贺振宏  牛智川
作者单位:Department;Physics;Shanxi;University;Institute;Semiconductors;Chinese;Academy;Sciences;
基金项目:supported by the National Natural Science Foundation of China(No.10734060);;the National Basic Research Program of China(No.2006CB921504)
摘    要:Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the 120] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

关 键 词:表面形态学  光学特性  量子点  原子力学

Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
Quanxiang Wei Zhengwei Ren Zhenhong He , Zhichuan Niu.Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J].中国光学快报(英文版),2009(1):52-55.
Authors:Quanxiang Wei Zhengwei Ren Zhenhong He  Zhichuan Niu
Institution:Quanxiang Wei~1 Zhengwei Ren~2 Zhenhong He~2 , Zhichuan Niu 1 Department of Physics,Shanxi University,Taiyuan 030006 2 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083
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