| 摘 要： | ZnS films were deposited by pulsed laser deposition(PLD)on porous silicon(PS)substrates formed by electrochemical anodization of p-type(100)silicon wafer.The photoluminescence(PL)spectra of ZnS/PS composites were measured at room temperature.Under different excitation wavelengths,the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values.After samples were annealed in vacuum at different temperatures(200,300,and 400℃)for 30 min respectively,a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples,and all of the ZnS/PS composites had a broad PL band(450-700 nm)in the visible region,exhibiting intensively white light emission.
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