| Annealing effects on residual stress of HfO_2/SiO_2 multilayers |
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| 作者单位： | Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences，School of Science Henan University of Science and Technology，Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences，Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences，Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 Graduate University of Chinese Academy of Sciences，Beijing 100049，Luoyang 471003，Shanghai 201800，Shanghai 201800，Shanghai 201800 |
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| 摘 要： | HfO_2/SiO_2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method. The effects of annealing at the temperature between 200 and 400℃on residual stresses have been studied. It is found that the residual stress of as-deposited HfO_2/SiO_2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases. And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃. At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.
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