Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers |
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| Authors: | Jindong Wu Danping Chen Xingkun Wu and Jianrong Qiu |
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| Institution: | 4,5 1 State Key Laboratory of Modern Instruments, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China 2 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China 3 Zhejiang Futong Optical Fiber Technology Corp. Ltd., Fuyang 311422, China 4 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China 5 Optical Communication Materials Laboratory, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | Bi-doped SiO 2 –Al 2 O 3 –GeO 2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi 0 and Bi + species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser. |
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