| An in situ growth method for property control of LPCVD polysilicon film |
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| 作者姓名： | 余洪斌 陈海清 李俊 汪超 |
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| 作者单位： | Department of Optoelectronics Engineering，Huazhong University of Science and Technology，Wuhan 430074，Department of Optoelectronics Engineering，Huazhong University of Science and Technology，Wuhan 430074，Department of Optoelectronics Engineering，Huazhong University of Science and Technology，Wuhan 430074，Department of Optoelectronics Engineering，Huazhong University of Science and Technology，Wuhan 430074 |
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| 摘 要： | Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multilayer concept is presented to control the property for as-deposited polysilicon. A 3-μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.
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