A simple method for well-defined and clean all-SiC nano-ripples in ambient air |
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| Institution: | 1. National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics (IFP), China Academy of Engineering Physics (CAEP), Mianyang 621900, Sichuan, China;2. Le Quy Don Technical University, No. 100, Hoang Quoc Viet Street, Hanoi 7EN-248, Vietnam;3. School of Electronics & Information Engineering, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Collaborative Innovation Center of Suzhou Nano Science and Technology, Xi׳an Jiaotong University (XJTU), No. 28, Xianning West Road, Xi׳an 710049, Shaanxi, China |
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| Abstract: | Well-defined and clean all-SiC nano-ripples with a period of about 150 nm are produced via the combination of 800-nm femtosecond laser irradiation and chemical selective etching with mixture solution of 65 wt% HNO3 acid (20 mL) and 40 wt% HF acid (20 mL). The incorporation mechanism of oxygen (O) species into the laser induced obscured nano-ripples is attributed to femtosecond laser induced trapping effect of dangling bonds, while that of chemical etching induced well-defined and clean nano-ripples is assigned to chemical reactions between mixture acid solution and amorphous silicon carbide (SiC) or silicon oxide (SiO2). Results from EDX analysis show that the incorporated foreign O species (atomic percentages of 9.39%) was eliminated effectively via chemical etching, while the atomic percentages of silicon (Si) and carbon (C) were about 47.82% and 52.18% respectively, which were similar to those of original SiC material. And the influences of laser irradiation parameters on the nano-ripples are also discussed. |
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| Keywords: | Nano-ripples Femtosecond laser Chemical selective etching Silicon carbide |
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