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Formation of Nanoscale T-Shaped Gates Using Directional Angular Deposition of Thin Aluminum Films |
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| Authors: | Kulinich I V Kazimirov A I Shesterikov E I |
| Institution: | 1.Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia ; |
| Abstract: | Russian Physics Journal - This paper presents the technology of fabrication of T-shaped gates for GaAs transistors using optical lithography and a unique method of directional angular deposition of... |
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