Photosensitivity spectra of a gallium arsenide heterojunction with amorphous arsenic trisulfide

We present a study of the photoresponse spectrum of heterojunctions ofn-GaAs with amorphous As₂S₃ films with various thicknesses of the glassy chalcogenide semiconducting film. We obtain an expression to calculate the fraction of the light absorbed in the glassy semiconductor, the fraction of the light absorbed in GaAs, taking into account the multiple reflections at the interfaces in the structure under study, and also their ratio. We present an analysis of the absorption of light in the structure. The calculated results show good agreement with experiment. University of Kaliningrad, Kaliningrad. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 1, pp. 3–8, January, 1999.