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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates |
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| Authors: | Е А Emel’yanov А P Kokhanenko D S Abramkin O P Pchelyakov М А Putyato B R Semyagin V V Preobrazhenskii A P Vasilenko D F Feklin Zhicuan Niu Haiqiao Ni |
| Institution: | 1. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia 2. National Research Tomsk State University, Tomsk, Russia 3. Institute of Semiconductors of the Chinese Academy of Sciences, Haidian District, Beijing, China |
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| 本文献已被 SpringerLink 等数据库收录！ | |