Microwave power absorption in space-charge region of high-resistivity semiconductors

The distribution of a microwave electric field in the space charge region (SCR) of semiconductors is found from a joint solution of the diffusion-drift equation and the Poisson equation. Large enriching bends of the bands lead to screening of the microwave field by SCR free carriers, with the result that the microwave power absorption is limited when the bends become larger. An expression is found for the relation between the quality factor Q_g of the capacitive gap of the measuring resonator and the size of the bends. Plots of maximum error of measurement of the conducitivity of semiconductors due to neglect of absorption in the SCR against measured values of Q_g are obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 18–22, November, 1981.