Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors |
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| Authors: | N R Aghamalyan T A Aslanyan E S Vardanyan Y A Kafadaryan R K Hovsepyan S I Petrosyan A R Poghosyan |
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| Institution: | 1. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia
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| Abstract: | Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors have been studied. The influence of defect complex caused by oxygen vacancy and interstitial zinc atom on the metal-insulator transition is considered. The peculiarities of this transition in ZnO films doped with donor or acceptor impurity and the influence of mentioned defect complex on the charge carrier transfer mechanism were investigated. |
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