首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Interlayer coupling effect in van der Waals heterostructures of transition metal dichalcogenides
Authors:Yuan-Yuan Wang  Feng-Ping Li  Wei Wei  Bai-Biao Huang  Ying Dai
Institution:School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Abstract:Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of type-II band alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer, instead of an external electric field. On the basis of symmetry analysis, the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined, and a four-level k·p model was developed to obtain the interlayer hopping. Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets. Moreover, the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.
Keywords:van der Waals heterostructures  transition metal dichalcogenides  interlayer coupling effects  k·p model  interlayer exciton  
本文献已被 维普 等数据库收录!
点击此处可从《Frontiers of Physics》浏览原始摘要信息
点击此处可从《Frontiers of Physics》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号