氯化锌修饰蓝光量子点发光二极管EI北大核心CSCD

采用氯化锌(ZnCl_(2))修饰镉基CdSe/ZnS蓝光量子点(B-QD)薄膜,发现与量子点表面结合力更强的ZnCl_(2)能够部分取代量子点长链配体油酸,有效钝化量子点表面缺陷,提高薄膜的荧光量子效率(PLQY)。此外,由于ZnCl_(2)具有偶极作用,使量子点真空能级提高0.2 eV,一方面可改善电子和空穴载流子注入平衡,另一方面可有效降低发光器件的启亮电压,提高器件的发光寿命。这种无机配体修饰量子点薄膜的方法可能为解决蓝光量子点发光二极管(B-QLEDs)因空穴注入困难和量子点表面缺陷导致器件性能不高的问题提供一个有效思路。

Zinc Chloride Modification of Blue Quantum Dot Light-emitting Diode

Inorganic zinc chloride(ZnCl₂)was used as a ligand to modify cadmium-based blue quantum dot(B-QD)film.In this case,ZnCl₂ can partially replace the original long-chain ligand of oleic acid(OA)because of a strong interaction between ZnCl₂ and QDs.The replaced ZnCl₂ can passivate the surface defects of QDs to enhance the photoluminescence quantum yield(PLQY)of the QDs film.Meanwhile,the strategy can significantly improve carrier transport capacity and pull up the vacuum energy level of the QDs film by 0.2 eV due to ZnCl2 dipoles,which may improve electron and hole injection balance,reduce the turn-on voltage of EL devices,and extend device lifetime as well.This method might provide an effective way to improve performances of blue quantum dot light-emitting diodes.