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N2掺杂p型ZnO及ZnO同质p-n结LED的制备
引用本文:张振中,魏志鹏,吕有明,矫淑杰,姚斌,申德振,张吉英,赵东旭,李炳辉,郑著宏,范希武.N2掺杂p型ZnO及ZnO同质p-n结LED的制备[J].发光学报,2006,27(6):1026-1028.
作者姓名:张振中  魏志鹏  吕有明  矫淑杰  姚斌  申德振  张吉英  赵东旭  李炳辉  郑著宏  范希武
作者单位:1. 中国科学院, 激发态物理重点实验室, 吉林, 长春, 130033;2. 中国科学院, 研究生院, 北京, 100049;3. 长春理工大学, 理学院, 吉林, 长春, 130022
基金项目:国家自然科学基金;中国科学院知识创新工程项目;国家自然科学基金
摘    要:采用射频等离子体辅助分子束外延方法,以N2作为掺杂源,以O2作为辅助分解的气体和氧源,通过等离子体光谱的实时监测来控制掺杂源中各组分的含量,制备了p型ZnO薄膜及同质p-n结。I-V曲线显示该p-n结具有整流特性,直流驱动下获得了稳定的室温电致发光,包括位于420nm附近的发光峰和500~700nm的发光带。

关 键 词:氧化锌  发光二极管  N掺杂
文章编号:1000-7032(2006)06-1026-03
收稿时间:2006-08-25
修稿时间:2006-09-24

p-type ZnO and ZnO p-n Homojunction LED by Using Activated N2 Doping
ZHANG Zhen-zhong,WEI Zhi-peng,LU You-ming,JIAO Shu-jie,YAO Bin,SHEN De-zhen,ZHANG Ji-ying,ZHAO Dong-xu,LI Bing-hui,ZHENG Zhu-hong,FAN X W.p-type ZnO and ZnO p-n Homojunction LED by Using Activated N2 Doping[J].Chinese Journal of Luminescence,2006,27(6):1026-1028.
Authors:ZHANG Zhen-zhong  WEI Zhi-peng  LU You-ming  JIAO Shu-jie  YAO Bin  SHEN De-zhen  ZHANG Ji-ying  ZHAO Dong-xu  LI Bing-hui  ZHENG Zhu-hong  FAN X W
Institution:1. Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130033, China;2. Gaduate School of Chinese Academy of Sciences, Beijing 100049, China;3. Department of Science, Changchun University of Science and Technology, Changchu
Abstract:p-type ZnO has attracted more and more attention because it is necessary to fabricate ZnO devices based on current injection. More and more improvements on p-type ZnO and p-n junctions are reported. However, electroluminescence in these works was rarely observed. We have already succeed in fabricating a ZnO p-n junction LED on sapphire substrate by using activated NO plasma. Here, N2 was used as the acceptor dopant and O2 was used as assistant gas as well as oxygen source. Emission spectra of the N2-O2 plasma were monitored in situ to adjust parameters timely. Electronics measurements of the as-grown p-type ZnO on sapphire shows a carrier concentration of 1.2×1018cm-3 and mobility approach to 1 cm2·V-1·s-1. The LED based on p-n junction shows a certain rectification effect and the turn on voltage is 3.10 V, which is consistent with the bandgap of ZnO. Electroluminescence spectra shows two bands: one is at 420 nm, from donoracceptor pairs; and the other ranges from 500 to 700 nm, which is attributed to the emissions from point defects in ZnO.
Keywords:ZnO  LED  N-doped
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