| 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响 |
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| 引用本文： | 祐卫国,张勇,李璟,杨峰,CHENG C H,赵勇.溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J].发光学报,2010,31(4):503-508. |
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| 作者姓名： | 祐卫国 张勇 李璟 杨峰 CHENG C H 赵勇 |
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| 作者单位： | 1. 西南交通大学超导研究开发中心 材料先进技术教育部重点实验室, 四川 成都 610031;
2. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia |
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| 基金项目： | 国家自然科学基金，国家重大基础研究项目"973"，国家高科技项目"863"，高等学校博士点专项科研基金，西南交通大学科研基金 |
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| 摘 要： | 用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;溅射压强P=0.6Pa,氩氧比Ar/O2=20/5.5sccm时,(002)晶面衍射峰强度和平均晶粒尺寸较大,(O02)XRD峰半峰全宽(FWHM)最小,光致发光紫外峰强度最强。
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| 关 键 词： | ZnO薄膜 射频反应磁控溅射 溅射压强 氩氧比 光致发光 |
| 收稿时间： | 2009-09-07 |
| 修稿时间： | 2009-12-24 |
Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering |
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| YOU Wei-guo,ZHANG Yong,LI Jing,YANG Feng,CHENG C H,ZHAO Yong.Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J].Chinese Journal of Luminescence,2010,31(4):503-508. |
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| Authors: | YOU Wei-guo ZHANG Yong LI Jing YANG Feng CHENG C H ZHAO Yong |
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| Institution: | 1. Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 610031, China,;
2. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia |
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| Abstract: | Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O2=20/5.5 sccm, the (002) plane diffraction peak intensity and the grain size are larger, the FWHM of (002) peak is the smallest,UV photoluminescence peak intensity is the strongest. |
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| Keywords: | ZnO films RF reactive magnetron sputtering sputtering pressure argon-oxygen ratio photoluminescence |
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