| 利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化 |
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| 引用本文： | 何涛,陈耀,李辉,戴隆贵,王小丽,徐培强,王文新,陈弘.利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化[J].发光学报,2011,32(4):363-367. |
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| 作者姓名： | 何涛 陈耀 李辉 戴隆贵 王小丽 徐培强 王文新 陈弘 |
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| 作者单位： | 中国科学院物理研究所 凝聚态国家重点实验室, 北京 100190 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(60890192,60877006,50872146); the Chinese Science and Technology Ministry(“863”,No.2009AA033101)~~ |
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| 摘 要： | 采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在r面蓝宝石衬底上生长了非极性的α面GaN,并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究.两步AIN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量,本文进一步优化了两步AlN缓冲层的结构,并得到...
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| 关 键 词： | GaN 各向异性 X射线衍射 AlN 缓冲层 |
| 收稿时间： | 2011-01-20 |
Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD |
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| HE Tao,CHEN Yao,LI Hui,DAI Long-gui,WANG Xiao-li,XU Pei-qiang,WANG Wen-xin,CHEN Hong.Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD[J].Chinese Journal of Luminescence,2011,32(4):363-367. |
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| Authors: | HE Tao CHEN Yao LI Hui DAI Long-gui WANG Xiao-li XU Pei-qiang WANG Wen-xin CHEN Hong |
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| Institution: | Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Nonpolar(1120) a-plane GaN films with two-step AlN buffer(a low-temperature(LT) and a high-temperature(HT) AlN layers) were grown on(1102) r-plane sapphire by metalorganic chemical vapor deposition(MOCVD).The as-grown films were investigated by high-resolution X-ray diffraction(XRD) and photoluminescence(PL).The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works.In this report,the thickness of the two-step buffer was f... |
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| Keywords: | GaN anisotropy XRD AlN buffer layer |
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