溅射气氛对N掺杂ZnO薄膜性能的影响

利用磁控溅射系统,N₂和Ar作为溅射气体,生长N掺杂ZnO薄膜。溅射气氛中氮气流量分别为0,8,20,32 mL/min,通过改变氮气的流量,研究薄膜性能的变化。结果发现,随着溅射气氛中氮气流量的增加,薄膜的电阻率增加,薄膜中N_O与(N₂)_O的掺杂浓度同时在变大。当氮气流量为8 mL/min时,N的有效掺杂效率最高。另外,随着溅射气氛中氮气流量的增加,薄膜的厚度在减小。

Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films

Using radio frequency magnetron sputtering technique, N doped ZnO films were prepared on quartz substrate with mixture of nitrogen and argon as sputtering gas, and the nitrogen flux was 0, 8, 20, 32 mL/min, respectively. The effects of the nitrogen flux on the structure and properties of N doped ZnO thin films were investigated. It is found that the resistivity of the films increases with the increasing of the nitrogen flux, and the content of N_O and (N₂)_O increases, too. When the nitrogen flux is 8 mL/min, the deposited film has the best effective doping efficiency of nitrogen. Furthermore, the thickness of ZnO: N films decreases with the nitrogen flux increasing.