| 薄膜电致发光器件中SiO2层加速机制的研究 |
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| 引用本文： | 王平,刘勇.薄膜电致发光器件中SiO2层加速机制的研究[J].发光学报,1997,18(4):289-291. |
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| 作者姓名： | 王平 刘勇 |
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| 作者单位： | 1. 中国科学院结构分析开放实验室, 合肥 230026;2. 中国科学技术大学物理系, 合肥 230026 |
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| 摘 要： | 研究非晶SiO2缺陷能级上电子的隧道效应,移植实验的XPS芯能级谱技术,用DV-Xα计算界面SiO2/ZnS的能带断错,认为该界面处的能带断错是电子加速的主要机制.
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| 关 键 词： | TFEL 隧道效应 能带断错 |
STUDY ON ACCELERATING MECHANISM OF SiO 2 LAYER IN TFEL DEVICE |
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| Wang Ping a,b Liu Yong a,b Ma Yi b Yang Bo b Lou Liren b Xia Shangda a,b a.STUDY ON ACCELERATING MECHANISM OF SiO 2 LAYER IN TFEL DEVICE[J].Chinese Journal of Luminescence,1997,18(4):289-291. |
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| Authors: | Wang Ping a b Liu Yong a b Ma Yi b Yang Bo b Lou Liren b Xia Shangda a b a |
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| Institution: | 1. Structure Research Laboratory, Chinese Academy of Sciences, Hefei 230026;2. Dept. of Phys., Univ. of Sci. and Tech. of China, Hefei 230026 |
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| Abstract: | The tunneling effect of electrons in SiO2 deep level provides partial electron sources which transport along SiO2 extended state of conduct band.By imitation to experimental XPS-core-level-measure technology,we calculated the band offset in SiO2/ZnS interfere using DV-X α method.Due to this band offset,electrons obtain energy of about 2.3 eV while entering ZnS layer. |
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| Keywords: | TFEL tunneling effect band offset |
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