| 低压-MOCVD方法制备CdS-ZnS应变多量子阱 |
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| 引用本文： | 于广友,范希武.低压-MOCVD方法制备CdS-ZnS应变多量子阱[J].发光学报,1997,18(2):95-99. |
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| 作者姓名： | 于广友 范希武 |
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| 作者单位： | 1. 中国科学院长春物理研究所, 长春 130021;2. 中国科学院激发态物理开放研究实验室, 长春 130021 |
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| 基金项目： | 国家攀登计划、国家自然科学基金,中国科学院激发态物理开放实验室资助 |
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| 摘 要： | 本文报道了用低压(LP)-MOCVD方法制备CdS-ZnS应变多量子阱结构.通过X-射线衍射谱证实了所制备的样品具有比较好的多层结构,并通过77K下的光致发光(PL)光谱,观测到了大的垒层对电子的限制效应及由大的应变引起的阱层带边变化所导致的发光峰蓝移.
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| 关 键 词： | LP-MOCVD CdS-ZnS应变多量子阱 量子尺寸效应 |
| 收稿时间： | 1996-09-28 |
PREPARATION OF CdS ZnS STRAINED LAYER MUTIPLE QUANTUM WELLS |
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| Yu Guangyou,Fan Xiwu,Zhang Jiying,Yang Baojun,Shen Dezhen,Lu Youming.PREPARATION OF CdS ZnS STRAINED LAYER MUTIPLE QUANTUM WELLS[J].Chinese Journal of Luminescence,1997,18(2):95-99. |
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| Authors: | Yu Guangyou Fan Xiwu Zhang Jiying Yang Baojun Shen Dezhen Lu Youming |
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| Institution: | 1. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021;2. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | CdS ZnS strained layer multiple quantum wells have been fabricated on the (100) GaAs substrate by LP MOCVD. The satellite peaks of X ray diffraction indicate the existence of a good crystallinity MQWs. PL spectrum at 77 K shows the strong luminescence peaks at 365 nm and 385 nm respectively, which shift to high energy side about 0 8 eV compared to the CdS single crystal. It indicates the existence of the quantum confinement effect and large band shift caused by large strain. |
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| Keywords: | LP MOCVD CdS ZnS strained layer multiple quantum wells quantum confinement effect |
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