气相输运法制备ZnO薄膜(英文)

运用气相输运技术在不同的衬底上制备ZnO薄膜,同时对这些ZnO薄膜的表面形貌、晶体结构和光学特性进行表征。在扫描电子显微镜图像上可以看到,相比没有镀金的Si衬底,ZnO纳米颗粒在镀金的Si衬底上的生长尺寸较大。X射线衍射测试结果表明,在Si(111)和Si(100)衬底上生长的ZnO薄膜显示出不同的六角纤锌矿结构的衍射峰,但没有出现立方闪锌矿ZnO结构的衍射峰。在镀金的Si衬底上,ZnO薄膜生长取向主要为c轴方向。此外,所有ZnO样品的光致发光谱上均只出现一个狭窄且强的紫外峰,约在389 nm(3.19 eV)波长处。

ZnO Films Grown by the Vapor Transport Method

The characterizations of surface morphologies, crystal structures, and optical properties of the ZnO films prepared by a vapour-phase technique on different substrates were performed in this study. Scanning electron micro-scopy (SEM) data showed that larger ZnO particles are formed on the Au-covered Si substrates than those on Si substrates. X-ray diffraction (XRD) results indicated that hexagonal wurtzite ZnO films are grown on both Si(111) and Si(100) substrates though they present different diffraction peaks with hexagonal wurtzite structure, while appears no sphalerite structure. The ZnO films prepared on Au-coated Si substrates prefer to grow along with c-axis orientation. The PL spectra reveal only a narrow strong UV emission peak at about 389 nm (3.19 eV) in all the ZnO samples.