| ZnO-Si不同退火条件对生长ZnSe薄膜的影响 |
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| 引用本文： | 王晓华,范希武,单崇新,张振中,张吉英,刘益春,吕有明,申德振. ZnO-Si不同退火条件对生长ZnSe薄膜的影响[J]. 发光学报, 2003, 24(1): 61-65 |
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| 作者姓名： | 王晓华 范希武 单崇新 张振中 张吉英 刘益春 吕有明 申德振 |
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| 作者单位： | 1. 中国科学院长春光学精密机械与物理研究所,激发态物理重点实验室,吉林,长春,130022;长春理工大学,高功率半导体激光国家重点实验室,吉林,长春,130022
2. 中国科学院长春光学精密机械与物理研究所,激发态物理重点实验室,吉林,长春,130022 |
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| 基金项目： | 国家攀登计划，国家自然科学重大基金 ( 6 9896 2 6 0 )，中科院创新工程项目，中科院百人计划项目，国家自然科学基金资助项目 |
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| 摘 要： | 研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。
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| 关 键 词： | 退火条件 ZnSe薄膜 硒化锌薄膜 Si衬底 ZnO缓冲层 LP－MOCVD 硅衬底 薄膜生长 氧化锌 半导体材料 |
| 文章编号： | 1000-7032(2003)01-0061-05 |
| 修稿时间： | 2002-06-25 |
Effect of Different Annealing Conditions of ZnO-Si on the Growth of ZnSe |
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| WANG Xiao-hua ,,FAN X W ,SHAN Cong-xin ,ZHANG Zhen-zhong ,ZHANG Ji-ying ,LIU Yi-chun ,LU You-ming ,SHEN De-zhen. Effect of Different Annealing Conditions of ZnO-Si on the Growth of ZnSe[J]. Chinese Journal of Luminescence, 2003, 24(1): 61-65 |
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| Authors: | WANG Xiao-hua FAN X W SHAN Cong-xin ZHANG Zhen-zhong ZHANG Ji-ying LIU Yi-chun LU You-ming SHEN De-zhen |
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| Affiliation: | WANG Xiao-hua 1,2,FAN X W 1,SHAN Cong-xin 1,ZHANG Zhen-zhong 1,ZHANG Ji-ying 1,LIU Yi-chun 1,LU You-ming 1,SHEN De-zhen 1 |
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| Abstract: | ZnSe epilayers were grown on Si(111)substrates by low-pressure metalorganic chemical vapor deposition(MOCVD) with ZnO as a buffer layer. ZnO films were prepared by radio frequency(RF) magnetron sputter deposition technique. X-ray diffraction measurements showed that ZnSe film grown on ZnO-Si(111) substrates were epitaxial films with strong (111) preferential orientation. It is found from X-ray diffraction that the longer time annealing of ZnO films, the better crystallization of ZnSe films were. Photoluminescence (PL) showed that with the higher annealing temperature of ZnO buffer layer, the better ZnSe films also. The photoluminescence (PL) showed a strong and dominant peak emission at near-band-edge emission about 450nm,which was ascribed to free exciton emission. Above results indicated that quality of ZnSe films grown on Si(111) substrates were improved by using ZnO as a buffer layer. |
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| Keywords: | ZnSe film Si-substrate ZnO buffer layer MOCVD |
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