| 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响 |
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| 引用本文： | 王云华,周路,乔忠良,高欣,薄报学.氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响[J].发光学报,2013,34(3):308-313. |
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| 作者姓名： | 王云华 周路 乔忠良 高欣 薄报学 |
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| 作者单位： | 长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022 |
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| 基金项目： | 国家自然科学基金(61177019,61176048)资助项目 |
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| 摘 要： | 介绍了一种氩、氢混合等离子体清洗GaAs基片的实验工艺,深入研究了氩、氢等离子体清洗GaAs表面污染物和氧化层,并活化表面性能的基本原理,同时讨论了气体流量、溅射功率和清洗时间等不同溅射参数对等离子体清洗效果的影响。结果表明,在氩气和氢气流量分别为10 cm3/min和30 cm3/min,溅射功率为20 W,清洗时间为15 min的条件下,GaAs样品的光致发光强度提高达139.12%,样品表面的As-O键和Ga-O键基本消失。
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| 关 键 词： | 等离子清洗 GaAs基片 发光强度 |
| 收稿时间： | 2012-11-27 |
Effects of Ar and H2 Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates |
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| WANG Yun-hua,ZHOU Lu,QIAO Zhong-liang,GAO Xin,BO Bao-xue.Effects of Ar and H2 Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates[J].Chinese Journal of Luminescence,2013,34(3):308-313. |
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| Authors: | WANG Yun-hua ZHOU Lu QIAO Zhong-liang GAO Xin BO Bao-xue |
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| Institution: | State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China |
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| Abstract: | A new plasma cleaning process for GaAs surface using Ar/H2 plasma was introduced in this paper. The process for Ar/H2 plasma cleaning and surface activation was studied comprehensively to remove various contaminants, oxide layer on GaAs surface, and the influence of Ar/H2 plasma under different plasma parameters was discussed in detail. The results show that GaAs samples treated under the condition of Ar,H2 flow rate 10,30 cm3/min, sputtering power 20 W and cleaning time 15 min give the best cleaning effect, the photoluminescence intensity increases by 139.12%, and the As-O and Ga-O bonds on the GaAs surface decrease greatly. |
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| Keywords: | plasma cleaning GaAs substrates photoluminescence intensity |
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