| 浅ZnCdSe/ZnSe量子阱的光泵受激发射 |
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| 引用本文： | 于广友,范希武.浅ZnCdSe/ZnSe量子阱的光泵受激发射[J].发光学报,1997,18(3):199-204. |
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| 作者姓名： | 于广友 范希武 |
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| 作者单位： | 中国科学院长春物理研究所;2. 中国科学院激发态物理开放研究实验室 |
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| 摘 要： | 本文主要研究浅ZnCdSe/ZnSe单量子阱在77K温度下的光致发光。在不同激发密度下,讨论了该结构的发光机制,把77K温度下的受激发射归结为是激子-激子散射所引起的。文中还分析了在浅ZnCdSe/ZnSe量子阱中能够实现与激子相关的受激发射的原因。
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| 关 键 词： | 浅ZnCdSe/ZnSe量子阱 光泵 受激发射 |
| 收稿时间： | 1996-11-13 |
STIMULATED EMISSION OF SHALLOW ZnCdSe/ZnSe SINGLE QUANTUM WELL |
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| Yu Guangyu Fan Xiwu Zhang Jiying,Yang Baojun Zheng Zhuhong Lu Youming.STIMULATED EMISSION OF SHALLOW ZnCdSe/ZnSe SINGLE QUANTUM WELL[J].Chinese Journal of Luminescence,1997,18(3):199-204. |
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| Authors: | Yu Guangyu Fan Xiwu Zhang Jiying Yang Baojun Zheng Zhuhong Lu Youming |
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| Institution: | 1. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021;2. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | Photoluminescence of shallow Zn 0.92 Cd 0.08 Se/ZnSe single quantum well grown by LP MOCVD was measured for different excitation intensity at 77 K . The spontaneous spectra show two emission peaks at 451.5 nm and 452.9 nm respectively. Compared to stimulated emission spectra, we can see that the stimulated emission came from the high energy emission peak in spontaneous emission spectra. The origin of the stimulated emission was attributed to exciton exciton process in the sample. |
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| Keywords: | shallow ZnCdSe/ZnSe MQWs photoexcite stimulated emission |
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