| 气源分子束外延生长的InPBi薄膜材料中的深能级中心 |
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| 引用本文： | 王海龙,韦志禄,李耀耀,王凯,潘文武,吴晓燕,岳丽,李士玲,龚谦,王庶民.气源分子束外延生长的InPBi薄膜材料中的深能级中心[J].发光学报,2016,37(12):1532-1537. |
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| 作者姓名： | 王海龙 韦志禄 李耀耀 王凯 潘文武 吴晓燕 岳丽 李士玲 龚谦 王庶民 |
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| 作者单位： | 1. 山东省激光偏光与信息技术重点实验室, 曲阜师范大学 物理工程学院, 山东 曲阜 273165;
2. 中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室, 上海 200050 |
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| 基金项目： | 国家自然科学基金(61176065;61205055)；山东省自然科学基金(ZR2014FM011)；信息功能材料国家重点实验室开放课题(SKL201307) |
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| 摘 要： | 利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10~(-15)cm~2。在未有意掺杂的InP0.9751Bi0.0249中测量到一个少数载流子深能级中心H1,H1的能级位置为Ev+0.31 eV,俘获截面为2.87×10~(-17)cm~2。深中心E1应该起源于本征反位缺陷PIn,深中心H1可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。
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| 关 键 词： | InPBi 深中心 深能级瞬态谱(DLTS) 气源分子束外延(GSMBE) |
| 收稿时间： | 2016-08-13 |
Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy |
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| WANG Hai-long,WEI Zhi-lu,LI Yao-yao,WANG Kai,PAN Wen-wu,WU Xiao-yan,YUE Li,LI Shi-ling,GONG Qian,WANG Shu-min.Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy[J].Chinese Journal of Luminescence,2016,37(12):1532-1537. |
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| Authors: | WANG Hai-long WEI Zhi-lu LI Yao-yao WANG Kai PAN Wen-wu WU Xiao-yan YUE Li LI Shi-ling GONG Qian WANG Shu-min |
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| Institution: | 1. Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, College of Physics and Engineering, Qufu Normal University, Qufu 273165, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The properties of deep center in InP1-x Bix grown by gas source molecular beam epitaxy ( GSMBE) were firstly investigated using deep level transient spectroscopy ( DLTS) . For the sample of InP, E1 peak is observed under majority-carriers filling pulse conditions. It locates at Ec -0. 38 eV with capture cross section of 1. 87 × 10-15 cm2 . For the sample of InP0. 9751 Bi0. 0249 , H1 peak is observed under minority-carriers filling pulse conditions. It locates at Ev+0. 31 eV with capture cross section of 2. 87 × 10-17 cm2 . The deep level E1 is considered to originate from the intrinsic antisite of PIn . The deep level H1 is attributed to the formation of Bi pairs or complex Bi related clusters. It is very mean-ingful to make clear the causes of the two defects in the InP( Bi) materials for device application. |
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| Keywords: | InPBi deep center deep level transient spectroscopy ( DLTS ) gas source molecular beam epitaxy ( GSMBE) |
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