| 二次耦合直流输出的金属氧化物TFT行驱动电路 |
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| 引用本文： | 胡宇峰,李冠明,吴为敬,徐苗,王磊,彭俊彪.二次耦合直流输出的金属氧化物TFT行驱动电路[J].发光学报,2016,37(10):1223-1229. |
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| 作者姓名： | 胡宇峰 李冠明 吴为敬 徐苗 王磊 彭俊彪 |
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| 作者单位： | 1. 华南理工大学 电子与信息学院, 广东 广州 510641;
2. 华南理工大学 发光材料与器件国家重点实验室, 广东 广州 510641 |
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| 基金项目： | 国家自然科学基金(61574062;61574061)，广东省科技计划项目(2015B090914003 |
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| 摘 要： | 为了弥补现有氧化物TFT的行驱动电路输出模块在功率消耗、响应速度、输出摆幅等方面的不足,提出了基于二次耦合的直流输出模块,并由此研究设计新的行驱动电路拓扑。仿真结果表明,该输出模块具有驱动能力强、响应速度快等优点。最后,基于刻蚀阻挡层(ESL)结构的氧化物TFT工艺,在玻璃衬底上成功制备了该行驱动电路,实测单级功耗为325μW。
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| 关 键 词： | 行驱动电路 氧化铟锌薄膜晶体管 耦合效应 |
| 收稿时间： | 2016-05-01 |
Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module |
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| HU Yu-feng,LI Guan-ming,WU Wei-jing,XU Miao,WANG Lei,PENG Jun-biao.Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J].Chinese Journal of Luminescence,2016,37(10):1223-1229. |
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| Authors: | HU Yu-feng LI Guan-ming WU Wei-jing XU Miao WANG Lei PENG Jun-biao |
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| Institution: | 1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China;
2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China |
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| Abstract: | The gate driver integrated by metal oxide thin film transistors is able to lower the cost of driving ICs and narrow the bezel of display panel, but there are some disadvantages like poor power efficiency, slow response speed and small output swing for the existing output modules. In order to solve these problems, a novel twice-bootstrap DC output module was proposed, and a new gate driver topology was designed based on this module. The simulation results show that the circuit has strong driving ability and fast response speed. Finally, the gate drivers were successfully fabricated on glass substrate integrated by MOTFTs with etch stop layer structure. The power consumption of single stage of the gate driver is 325 μW. |
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| Keywords: | gate driver circuit IZO thin film transistor bootstrapping effect |
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